laser annealing meaning in Chinese
激光退火
雷射退火
Examples
- Influence of laser annealing on electrical properties of hgcdte
激光退火对碲镉汞电性能的影响 - Laser annealing equipment
激光退火装置 - On the basis of metal induced crystallization ( mic ) and ela , we have proposed a new method of metal induced excimer laser annealing ( mi - ela )
在金属诱导法制备多晶硅和激光晶化法制备多晶硅的基础上，我们提出了一种新的多晶硅晶化法?金属诱导下激光晶化法。 - Because p - si is of more special characteristics , comparing to a - si and c - si , firstly , i set forth electrical features of p - si film and acknowledge profoundly electrical mechanism of p - si film . then three parameters of laser annealing , including laser frequency - , accepted - pulse - times and laser power density are studied how to influence crystallization of p - si
因为多晶硅和非晶硅及晶体硅相比具有更独特的特点，所以我们先阐述了多晶硅薄膜的电学特点，对多晶硅的导电机理有了深刻的了解；然后研究了激光频率、受光次数和激光功率密度三个参数对晶化多晶硅的影响。 - In tft , comparing to amorphous - silicon ( a - si ) material , polycrystal - line - silicon ( p - si ) material has more virtues of higher mobility and integration with peripheral circuits , so more and more researchers have devoted to the researching of the method to prepare p - si at low - temperature with cheap glass as substrate . in this thesis , by utilizing excimer laser annealing ( ela ) crystallization , the study of p - si has been deployed mainly
在tft中，多晶硅( p - si )材料比非晶硅( a - si )材料具有更高的迁移率和能实现周边驱动电路一体化的优点，众多的研究学者展开了获得多晶硅薄膜材料的研究，尤其大量地研究了能应用廉价玻璃为衬底的低温多晶硅制备方法。